n-channel enhancement mode mosfet feature ? 16v/3.6a, r ds(on) = 100m(max) @v gs = 4.5v. r ds(on) = 140m(max) @v gs = 2.5v. ? super high dense cell design for extremely low r ds(on) . ? reliable and rugged. ? sot-23 for surface mount package. sot-23 a pplications power management portable equipment and battery powered systems. absolute maximum ratings t a =25 unless otherwise noted parameter symbol limit units drain-source voltage v ds 16 v gate-source voltage v gs 8 v drain current-continuous i d 3.6 a electrical characteristics t a =25 unless otherwise noted parameter symbol test conditions min typ. max units off characteristics drain to source breakdown voltage bvdss vgs=0v, id=250 a 16 - - v zero-gate voltage drain current idss vds=12v, vgs=0v - - 1 a gate body leakage current, forward igssf vgs=8v, vds=0v - - 100 na gate body leakage current, reverse igssr vgs=-8v, vds=0v - - -100 na on characteristics gate threshold voltage vgs(th) vgs= vds, id=250a 0.4 - 1.3 v static drain-source on-resistance rds(on) vgs =4.5v, id =3.6 a - 70 100 m vgs =2.5v, id =3.1 a - 75 140 m drain-source diode characteristics and maximum ratings drain-source diode forward voltage vsd vgs =0v, is=0.94 a 1.2 v sales@zpsemi.com www.zpsemi.com CJ2302 1 of 6
typical characteristics 0 2 4 6 8 10 12 14 0 1 2 3 4 5 vds,drain-to-source voltage(volts) i d , d r a i n c u r r e n t ( a m p s ) 0 2 4 6 8 10 12 14 16 0 1 2 3 vgs,gate-to-source voltage(volts) i d , d r a i n c u r r e n t ( a m p s ) figure 1 output characteristics figure 2 transfer characteristics 22 22.5 23 23.5 24 24.5 25 0 50 100 150 200 tj.junction temperature() b v d s s , n o r m a l i z e d d r a i n - s o u r c e b r e a k d o w n v o l t a g e ( v o l t s ) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 50 100 150 200 tj.junction temperature() v g s , g a t e - t o - s o u r c e v o l t a g e ( v o l t s ) figure 3 breakdown voltage variation figure 4 gate threshold variation with temperature with temperature vgs=2.0v vgs=2.5 3 3.5 4 4.5 5 6 7v tj 125 tj 25 i d=250ua id=250ua vds=1.5v sales@zpsemi.com www.zpsemi.com 2 of 6 CJ2302
typical characteristics 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 50 100 150 200 tj.junction temperature() r d s ( o n ) , n o r m a l i z e d o n - r e s i s t a n c e ( ) 0 0.02 0.04 0.06 0.08 0.1 0.12 0 5 10 15 id-drain current(a) r d s ( o n ) - o n r e s i s t a n c e ( ) figure 5 on-resistance variation figure 6 on-resistance vs. drain current with temperature 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0 2 4 6 8 10 vgs,gate-to-source voltage(volts) r d s ( o n ) - o n r e s i s t a n c e ( ) 0.1 1 10 100 0 0.5 1 1.5 2 vsd-source-to-drain voltage(v) i s - s o u r c e c u r r e n t ( a ) figure 7 on-resistance vs. gate-to-source figure 8 source-drain diode forward voltage voltage 2.5v/3.1a vgs=2.5v vgs=4.5v id=3.6a tj 150 tj 25 4.5v/3.6a id=3.1a sales@zpsemi.com www.zpsemi.com 3 of 6 CJ2302
package outline dimensions (unit: mm) sot-23 sales@zpsemi.com www.zpsemi.com 4 of 6 CJ2302
sot-23 carrier tape sales@zpsemi.com www.zpsemi.com 5 of 6 CJ2302
sot-23 carrier reel sales@zpsemi.com www.zpsemi.com 6 of 6 CJ2302
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